5SHX2645L0002 3BHB012961R0001 3BHE009681R0101 GVC750BE01 ABB medium and high voltage

Description

5SHX2645L0002 3BHB012961R0001 3BHE009681R0101 GVC750BE01 ABB medium and high voltage

5SHX2645L0002 3BHB012961R0001 3BHE009681R0101 GVC750BE01 TSM – Non-Repetitive Surge Current:

• Definition:
  • TSM is the maximum non-repetitive surge current, representing the peak value of a half-sinusoidal surge current applied when the IGCT is at its maximum junction temperature.
• Test Condition:
  • The surge test is conducted with the IGCT operating at its maximum junction temperature of 125 °C.
  • Case temperature before a surge is usually below 125 °C, providing an additional margin to the real stress in an application.
• Surge Current Limitation:
  • The surge current limit is established under worst-case conditions, providing additional margin.
  • Surge current values are valid only for VD = VR ≈ 0 V after the surge, i.e., without reapplied voltage.
  • Single surges do not cause irreversible damage to the silicon wafer, but they should not occur too frequently.

• I²t – Limiting Surge Current Load Integral:
  • I²t is derived from the ITSM value and represents the surge current load integral.
  • It is expressed as ∫(IT² dt).
  • The I²t of a semiconductor fuse must be lower than the maximum I²t of the IGCT for protection.
  • Constraints for ITSM also apply to I²t.
• LD – Stray Inductance:
  • LD is the stray inductance between the IGCT and the anti-parallel diode.
  • Minimizing LD is recommended for optimized switching behavior.
  • Typical application values are in the range of 30 to 50 nH.
  • Asymmetric IGCT datasheets define a maximum LD; ABB has verified proper operation up to this high value.
• diT/dtcr – Critical Rate of Rise of Forward Current:
  • diT/dtcr is the critical rate of rise of forward current at IGCT turn-on.
  • Detailed descriptions are available in section 4.3.
• VT – On-State Voltage:
  • VT is the on-state voltage at a given on-state current IT (normally ITGQM) and at maximum junction temperature.
  • VT is influenced, within limits, by the irradiation dose determining minority carrier lifetime.
  • Lower VT implies a higher Eoff (off-state energy dissipation), and vice versa.
  • Maximum and typical values for VT are provided.

Understanding TSM and related parameters is crucial for assessing the IGCT’s surge capability and protecting it in various operating conditions. Proper consideration of surge conditions and constraints is necessary for reliable and safe IGCT operat