GE IS200IGDMH1B IGBT gate driver general circuit board

Product name:
GE IS200IGDMH1B IGBT gate driver general circuit board

Product model: IS200IGDMH1B

Quantity: inventory

Part No./PN: IS200IGDMH1B

Warranty: We provide warranty service for IS200IGDMH1B

Shipping Port:FuJian

Product technical documents: no relevant documents

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GE General Electric Technical Specifications: IS200IGDMH1B

If the phase VT connection is open delta, it is not IS200IGDMH1B possible to measure the third harmonic voltages at the generator termi

nals and a simple third harmonic neutral undervoltage element is used. The level is programmable in terms of Neutral VT

secondary voltage. In order to prevent nuisance tripping at low load IS200IGDMH1B or low generator voltages, two blocking functions are

provided. They apply to both the alarm and trip functions. When used as a simple undervoltage element, settings should be

based on measured 3rd harmonic neutral voltage of the healthy machine.


brand Product Name Product model Order No
GE Fanuc Module card IS200IGDMH1B nothing
Place of Origin Marketable land Imported or not defects liability period
Europe and America Nationwide and overseas yes a year
Place of shipment Delivery method How to use Applicable industries
Xiamen Shunfeng Express Commissioning and installation Power Plant Steel Plant Cement Plant Shipboard Papermaking
Service advantages Foreign import, goods preparation and supply Reasonable price and reliable quality Pictures are for reference only
Product features Primary source of goods, supply by model After sales guarantee Chen 1810693-7731


Loss of IS200IGDMH1B excitation is detected with an impedance element. When the impedance falls within the impedance circle for the

specified delay time, a trip will occur if it is enabled. Circles 1 and/or 2 can be tuned to a particular system. The larger circle

diameter should be set to the synchronous reactance of the generator, xd, and the circle offset to the generator transient

reactance x’d / 2. Typically the smaller circle (if used) is set to minimum time with a diameter set to 0.7xd and an offset of

x’d / 2. This feature is blocked if voltage supervision is enabled and the generator voltage is above the VOLTAGE LEVEL set

point. The trip feature is supervised by minimum current of 0.05 × CT. Note that the Loss of Excitation element will be

blocked if there is a VT fuse failure or if the generator is IS200IGDMH1B offline. Also, it uses output CT inputs.

The distance protection function (ANSI device 21) implements two zones of mho phase-to-phase distance protection (six

elements total) using the conventional phase comparator approach, with the polarizing voltage derived from the pre-fault

positive sequence voltage of the protected loop. This protection is intended as backup for the primary line protection. The

elements make use of the neutral-end current signals and the generator terminal voltage signals (see figure below), thus

providing some protection for internal and unit transformer faults. In systems with a delta-wye transformer (DY330°), the

appropriate transformations of voltage and current signals are implemented internally to allow proper detection of trans-

former high-side phase-to-phase faults. The reach setting is the positive sequence impedance to be covered, per phase,

expressed in secondary ohms. The same transformation shown for the Loss of Excitation element can be used to calculate

the desired settings as functions of the primary-side impedances.

The elements have a basic operating time of 150 ms. A VT fuse failure could cause a maloperation of a distance element

unless the element is supervised by the VTFF element. In order to prevent nuisance tripping the elements require a mini

mum phase current of 0.05 x CT.

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