GFD212A 3BHE020356R0101 3BHE020357P201 ABB Control Board

GFD212A 3BHE020356R0101 3BHE020357P201 General Description:

These N-Channel Logic Level MOSFETs are manufactured using onsemi’s advanced POWERTRENCH process, specifically designed to minimize on-state resistance while maintaining excellent switching performance. They are ideal for applications requiring low voltage and battery-powered operations, where minimizing power loss and achieving fast switching are essential.

GFD212A 3BHE020356R0101 3BHE020357P201 Features:

• 6.0 A, 30 V
  • RDS(ON) = 28 mΩ @ VGS = 10 V
  • RDS(ON) = 35 mΩ @ VGS = 4.5 V
• Fast Switching Speed
• Low Gate Charge
• High-Performance Trench Technology for Extremely Low RDS(ON)
• High Power and Current Handling Capability
• Pb-Free and Halogen-Free Device

GFD212A 3BHE020356R0101 3BHE020357P201 Absolute Maximum Ratings:

• VDSS (Drain-Source Voltage): 30 V
• VGSS (Gate-Source Voltage): ±20 V
• ID (Drain Current):
  • Continuous: 6 A
  • Pulsed: 20 A
• PD (Power Dissipation):
  • Single Operation: 1.6 W (Note 1a)
  • 1.0 W (Note 1b)
  • 0.9 W (Note 1c)
• TJ, TSTG (Operating and Storage Junction Temperature Range): -55 to +150 °C

Exceeding the maximum ratings may damage the device. If any of these limits are surpassed, device functionality should not be assumed, as damage may occur, and reliability may be affected.

(Note 1a: Values for PD are based on TA = 25°C, mounted on a minimum pad size of 0.06 square inches.) (Note 1b: Values for PD are based on TA = 25°C, mounted on a 1-inch square PCB, 2 oz. copper.) (Note 1c: Values for PD are based on TA = 25°C, mounted on a 1-inch square PCB, 1 oz. copper.)